| Author(s) and Co-Author(s) with Affiliation: Ashish Kumar Mandal(Physical Research Laboratory, Ahmedabad-380009, India), CS Vaishnava(Physical Research Laboratory, Ahmedabad-380009, India), Mithun NPS(Physical Research Laboratory, Ahmedabad-380009, India), Shanmugam M(Physical Research Laboratory, Ahmedabad-380009, India), Arpit Patel(Physical Research Laboratory, Ahmedabad-380009, India), Nishant Singh(Physical Research Laboratory, Ahmedabad-380009, India), Hiteshkumar Adalja(Physical Research Laboratory, Ahmedabad-380009, India), Santosh Vadawale(Physical Research Laboratory, Ahmedabad-380009, India), Veeresh Deshpande(Indian Institute of Technology Bombay, Mumbai-400076, India), Suddhasatta Mahapatra(Indian Institute of Technology Bombay, Mumbai-400076, India), Varun Bhalerao(Indian Institute of Technology Bombay, Mumbai-400076, India) |
| Abstract: Silicon Drift Detectors (SDDs) use a novel charge transport scheme, unlike other semiconductor detectors, generating an internal drift electric field to rapidly collect charge at small-area anodes, resulting in low capacitance and excellent energy resolution in the 1–30 keV range. Unlike conventional diodes, the anode capacitance in SDDs is independent of detector area, leading to faster signal rise times, higher output amplitudes, and reduced electronic noise. Initially SDDs were designed for excellent spectroscopic applications, but later they were used for imaging as well with a different electrodes configuration.
SDDs are fabricated in both linear and cylindrical geometries. Though cylindrical SDDs are now commercially available, they are limited to small effective areas. On the other hand, linear SDDs can be fabricated over larger areas and can offer position sensitivity in addition to the excellent energy resolution. Motivated by these advantages, we have taken an initiative to develop large-area linear SDDs for X-ray astronomical applications. As a first step towards indigenous fabrication, we focus on developing a small 2 mm× 2mm × 300 µm linear SDD. For this device we have carried out simulation using Technology Computer Aided Design (TCAD) software to know its electrical and transient behaviour for an optimum electrodes configuration. Here we present the design and TCAD simulation results of the device.
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